Numéro
J. Phys. IV
Volume 05, Numéro C3, Avril 1995
37ème Colloque de Métallurgie de l'INSTN
Microstructures et Recristallisation
Page(s) C3-141 - C3-149
DOI https://doi.org/10.1051/jp4:1995312
37ème Colloque de Métallurgie de l'INSTN
Microstructures et Recristallisation

J. Phys. IV 05 (1995) C3-141-C3-149

DOI: 10.1051/jp4:1995312

Solid State Recrystallization of II-VI Semiconductors : Application to Cadmium Telluride, Cadmium Selenide and Zinc Selenide

R. Triboulet, J.O. Ndap, A. El Mokri, A. Tromson Carli and A. Zozime

CNRS, Laboratoire de Physique des Solides de Bellevue, 1 place Aristide Briand, F 92195 Meudon cedex, France


Abstract
Solid state recrystallization (SSR) has been very rarely used for semiconductors. It has nevertheless been proposed, and industrially used, for the single crystal growth of cadmium mercury telluride according to a quench-anneal process. The reasons of the interest of this process, in specific cases of II-VI semiconductors crystal growth, will be analyzed (particular phase diagrams, phase transitions in the solid state close to the melting point, high temperature contaminations..etc.. make the use of traditional melt growth techniques unfavourable) and illustrated refering to CdHgTe literature. Original results related to the binary compounds CdTe, CdSe and ZnSe will be presented.



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