| Numéro |
J. Phys. IV France
Volume 04, Numéro C9, Novembre 1994
Proceedings of the European Symposium on Frontiers in Science and Technology with Synchrotron Radiation
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| Page(s) | C9-187 - C9-190 | |
| DOI | https://doi.org/10.1051/jp4:1994932 | |
J. Phys. IV France 04 (1994) C9-187-C9-190
DOI: 10.1051/jp4:1994932
Characterization of two-dimensional Er-silicide / Si (111) interface
M.H. Tuilier1, G. Gewinner1, C. Pirri1, P. Wetzel1, D. Bolmont1 and O. Heckmann21 Laboratoire de Physique et de Spectroscopie Electronique, Université de Haute-Alsace, 4 rue des Frères Lumière, 68093 Mulhouse cedex, France
2 Laboratoire pour l'Utilisation du Rayonnement Electromagnétique, Centre Universitaire Paris-Sud, Bâtiment 209D, 91405 Orsay cedex, France
Abstract
Si2p core level photoemission as well as X-ray polarization
dependent surface extended absorption fine structure (SEXAFS) have been used to
characterize the interface of a two-dimensional erbium silicide with Si(111).
This silicide, which consists of a hexagonal erbium monolayer located
underneath a buckled Si top layer, was grown by deposition of one monolayer of
erbium on clean Si(111) and annealing in the 400-600°C temperature range.
Photoemission experiments reveal a Schottky barrier height ØB as low
as 0.13 ± 0.05 eV while for thicker erbium silicide layers ØB is
found to be ∅B 0.3 eV. SEXAFS measured at the Er L3 edge shows
the location of erbium atoms in the eclipsed threefold hollow sites of the Si
substrate.The average distance of erbium to the silicon of the substrate is
found to be 3.10 ± 0.04 Å, whereas the distance of erbium atoms to their three
first neighbors in the Si top layer is found to be 2.94 ± 0.04 Å.
© EDP Sciences 1994