Numéro
J. Phys. IV France
Volume 04, Numéro C9, Novembre 1994
Proceedings of the European Symposium on Frontiers in Science and Technology with Synchrotron Radiation
Page(s) C9-113 - C9-116
DOI https://doi.org/10.1051/jp4:1994915
Proceedings of the European Symposium on Frontiers in Science and Technology with Synchrotron Radiation

J. Phys. IV France 04 (1994) C9-113-C9-116

DOI: 10.1051/jp4:1994915

Glass forming tendency in Ga-Ge-S glasses : a structural approach

N. Chbani1, A.M. Loireau-Lozac'h1, F. Keller2 and S. Bénazeth3, 4

1  Laboratoire de Chimie Physique Générale et Minérale, Faculté de Pharmacie, Université Paris V, 4 Avenue de l'Observatoire, 75270 Paris, France
2  Laboratoire de Biomathématiques et Physique, Faculté de Pharmacie, Université Paris V, 4 Avenue de l'Observatoire, 75270 Paris, France
3  Laboratoire LURE, Université Paris-Sud, 91405 Orsay, France
4  Laboratoire de Chimie Physique Minérale et Bioinorganique, Faculté de Pharmacie, Université Paris-Sud, 92296 Chatenay-Malabry, France


Abstract
We have studied by EXAFS glasses that belong to the Ga2S3-GeS2 line around Ga and Ge K edges. Both tetrahedral GaS4 and GeS4 units are evidenced and low temperature measurements reveal ordering around germanium atoms up to 4 Å.



© EDP Sciences 1994