Probing electron induced defects in CaF2 by photothermal displacement

M. Reichling; R. Bennewitz; E. Matthias

doi:doi:10.1051/jp4:1994746

Numéro		J. Phys. IV France Volume 04, Numéro C7, Juillet 1994 8th International Topical Meeting on Photoacoustic and Photothermal Phenomena 8 ITMP³ / 8éme conférence internationale de photoacoustique et photothermique


Page(s)		C7-191 - C7-194
DOI		https://doi.org/10.1051/jp4:1994746

8th International Topical Meeting on Photoacoustic and Photothermal Phenomena
8 ITMP³ / 8éme conférence internationale de photoacoustique et photothermique

J. Phys. IV France 04 (1994) C7-191-C7-194
DOI: 10.1051/jp4:1994746

Probing electron induced defects in CaF₂ by photothermal displacement

M. Reichling, R. Bennewitz and E. Matthias

Fachbereich Physik, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany

Abstract
The surface displacement technique is used to measure the temperature and frequency dependence of the periodic expansion of a CaF₂-surface subject to a modulated focused beam of 1keV electrons. Theoretical models are presented for a prediction of the observed phenomena based on thermal transport and defect lifetime effects. The use of such investigations for the study of thermal and non-thermal transport phenomena in alkaline-earth halides is discussed.