| Numéro |
J. Phys. IV France
Volume 04, Numéro C6, Juin 1994
WOLTE 1Proceedings of the First European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C6-147 - C6-152 | |
| DOI | https://doi.org/10.1051/jp4:1994623 | |
WOLTE 1
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-147-C6-152
DOI: 10.1051/jp4:1994623
Mail Stop 300-315, Jet Propulsion Laboratory, Pasadena, CA 91109, U.S.A.
© EDP Sciences 1994
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-147-C6-152
DOI: 10.1051/jp4:1994623
GaAs JFETs intended for deep cryogenic VLWIR readout electronics
T.J. Cunningham and E.R. FossumMail Stop 300-315, Jet Propulsion Laboratory, Pasadena, CA 91109, U.S.A.
Abstract
GaAs junction field-effect transistors (JFETs) are promising for deep cryogenic (<10K) readout electronics applications. This paper presents the structure and fabrication of GaAs JFETs and their performance at 4 K. It is shown that these JFETs operate normally at 4 K, with no anomalous behavior such as kinks or hysteresis. The noise voltage follows a 1/√f dependence and is approximately [MATH] at 1 Hz for a ring JFET that is 1250 µm in circumference and 5 µm long. The gate leakage current reaches 1 pA at a gate voltage of -6 V.
© EDP Sciences 1994