| Numéro |
J. Phys. IV France
Volume 04, Numéro C6, Juin 1994
WOLTE 1Proceedings of the First European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C6-37 - C6-41 | |
| DOI | https://doi.org/10.1051/jp4:1994606 | |
WOLTE 1
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-37-C6-41
DOI: 10.1051/jp4:1994606
1 Department of Electrical Engineering, University of California, Los Angeles, CA 90024, U.S.A.
2 SEMATECH, Austin, TX 78741-6499, U.S.A.
© EDP Sciences 1994
Proceedings of the First European Workshop on Low Temperature Electronics
J. Phys. IV France 04 (1994) C6-37-C6-41
DOI: 10.1051/jp4:1994606
Hot-carrier degradation of CMOS inverters and ring oscillators at 77K
J.-T. Hsu1, X. Li1, P. Aum2, D. Chan2 and C.R. Viswanathan11 Department of Electrical Engineering, University of California, Los Angeles, CA 90024, U.S.A.
2 SEMATECH, Austin, TX 78741-6499, U.S.A.
Abstract
The impact of hot-carrier (HC) stress on CMOS inverters at 77K was examined as a function of temperature. It was found that the degradation in inverter propagation delay was about one order less than that of the device transconductance degradation. Activation energy (EA) of propagation delay exhibited two distinct values from 295K to 77K, with a transition at around 175K for virgin and stressed inverters. The improvement of propagation delay and voltage transfer characteristic (VTC) at 77K compared to 295K was larger for virgin than HC stressed inverters.
© EDP Sciences 1994