J. Phys. IV France
Volume 04, Numéro C2, Février 1994European Workshop on Piezoelectric Materials : Crystal Growth, Properties and Prospects
|Page(s)||C2-215 - C2-223|
J. Phys. IV France 04 (1994) C2-215-C2-223
Exciton binding energies and photo-induced tunnelling of carriers in (Ga,In)As-GaAs heterostructures grown with built-in piezoelectric fieldP. BIGENWALD1, P. BORING1, K.J. MOORE2, B. GIL1 and K. WOODBRIDGE3
1 Groupe d'Etudes des Semiconducteurs, Université de Montpellier II, case courrier 074, 34095 Montpellier cedex 5, France
2 The Manchester Metropolitan University, Department of Mathematics and Physics, John Dalton Building, Chester Street, Manchester M1 5GD, U.K.
3 University College London, Department of Electronic and Electrical Engineering, London WC1E 7JE, U.K.
We compare the binding energy of interacting electron and hole pairs in double quantum wells with and without internal piezo-electric fields. We show that the exciton binding is less sensitive to the piezo electric field than the oscillator strength. This allows many body-effects and bandgap renormalization to be easily produced in strained-layer quantum wells with internal built-in piezo-electric fields, under photo excitation. Our observation was made at low temperature by comparing the behaviour of Ga0.92In0.08As-GaAs strained layer single and double quantum wells grown along the (001) and (111) directions when the densities of photo-injected carriers are tuned over several decades. Comparison between experimental data and the results of a Hartree calculation including the space charge effects reveals that manybody interactions are efficiently photo-induced in the (111)-grown samples. Moreover, tunnelling of the two first excited heavy-hole levels can be stimulated for moderate carrier densities making such structure promissive for realising self electrooptic effect device (SEED) modulators.
© EDP Sciences 1994