J. Phys. IV France
Volume 04, Numéro C2, Février 1994European Workshop on Piezoelectric Materials : Crystal Growth, Properties and Prospects
|Page(s)||C2-107 - C2-112|
J. Phys. IV France 04 (1994) C2-107-C2-112
Growth of piezoelectric thin films by sputteringD. REMIENS, B. JABER and P.Y. JOUAN
Université de Valenciennes, CRITT Maubeuge, Laboratoire des Matériaux Industriels, BP. 311, 59304 Valenciennes cedex, France
Lead titanate thin films have been deposited on different substrates by radio frequency magnetron sputtering from pressed powders targets. The films have been deposited without substrate heating. The amorphous films were then annealed in order to obtain the perovskite structure. Two types of post-annealing were study : conventional annealing and rapid thermal annealing (R.T.A.). The main advantage of the RTA process is to avoid (or to limit) the problem of interdiffusion or of interfacial disturbance between the substrate (in particular Silicium substrate) and the lead titanate thin film. The composition, structure and microstructure of PT films were evaluated as a function of the annealing parameters for conventional and rapid annealing.
© EDP Sciences 1994