Numéro |
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
|
|
---|---|---|
Page(s) | C5-237 - C5-240 | |
DOI | https://doi.org/10.1051/jp4:1993545 |
Le Journal de Physique IV 03 (1993) C5-237-C5-240
DOI: 10.1051/jp4:1993545
Γ-X mixing in type-II GaAs/AlAs short period superlattices
V. VOLIOTIS1, R. GROUSSON1, P. LAVALLARD1, E.L. IVCHENKO2, A.A. KISELEV2 and R. PLANEL31 Groupe de Physique des Solides, Universités Paris VI et Paris VII, URA 17 du CNRS, 2 place Jussieu, 75251 Paris cedex 05, France
2 A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
3 Laboratoire de Microstructures et de Microélectronique, UPR 20 du CNRS, 196 av. Henri Ravera, 92220 Bagneux, France
Abstract
We have measured the absolute absorption coefficient of optical transitions in type-II short period GaAs/AlAs superlattices, on a broad spectral range, at low temperature. The transmission experiments have been performed in a waveguiding configuration. Photoluminescence excitation experiments show as well the characteristics of the pseudodirect HH1-Xz excitonic transition. Theoretical calculations of the effective dielectric tensor and absorption coefficient in the vicinity of the exciton resonance frequency are presented, taking explicitely into account the Γ-X mixing of electronic states at heteroboundaries. From comparison between the experimental and theoretical values of the absorption coefficients, we have deduced a value of the Γ-X coupling coefficient for the studied superlattices.
© EDP Sciences 1993