Condensation of indirect excitons in coupled AlAs/GaAs quantum wells

L.V. BUTOV; A. ZRENNER; G. BÖHM; G. WEIMANN

doi:doi:10.1051/jp4:1993530

Numéro		Le Journal de Physique IV Volume 03, Numéro C5, Octobre 1993 Third International Conference on Optics of Excitons in Confined


Page(s)		C5-167 - C5-170
DOI		https://doi.org/10.1051/jp4:1993530

Third International Conference on Optics of Excitons in Confined

Le Journal de Physique IV 03 (1993) C5-167-C5-170
DOI: 10.1051/jp4:1993530

Condensation of indirect excitons in coupled AlAs/GaAs quantum wells

L.V. BUTOV, A. ZRENNER, G. BÖHM and G. WEIMANN

Walter Schottky Institut, Am Coulombwall, 85748 Garching, Germany

Abstract
The photoluminescence (PL) of excitons confined in an electric field tunable coupled AlAs/GaAs quantum well has been investigated at T[MATH]350 mK and magnetic field H[MATH]14 T. In the indirect regime when electrons and holes are separated both in real- and in k-space, magnetic field was found to result in (i) a strong change of both the PL intensity and decay time which is attributed to the anomalies in the exciton transport and (ii) an appearance of a huge broad band noise in the PL intensity which is an evidence of exciton condensation.