| Numéro |
Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
|
|
|---|---|---|
| Page(s) | C5-83 - C5-90 | |
| DOI | https://doi.org/10.1051/jp4:1993515 | |
Third International Conference on Optics of Excitons in Confined
Le Journal de Physique IV 03 (1993) C5-83-C5-90
DOI: 10.1051/jp4:1993515
1 Department of Electrical Engineering Kyoto University, Kyoto 606, Japan
2 Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, U.K.
© EDP Sciences 1993
Le Journal de Physique IV 03 (1993) C5-83-C5-90
DOI: 10.1051/jp4:1993515
Exciton-related lasing mechanism in ZnSe-(Zn, Cd) Se multiple quantum wells
Y. KAWAKAMI1, I. HAUKSSON2, H. STEWART2, J. SIMPSON2, I. GALBRAITH2, K.A. PRIOR2 and B.C. CAVENETT21 Department of Electrical Engineering Kyoto University, Kyoto 606, Japan
2 Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, U.K.
Abstract
The processes involved in the stimulated emission by photo pumping in (Zn,Cd)Se-ZnSe multiple quantum wells (MQWs) have been investigated at 77K for a series of different well widths. It has been shown by means of photoluminescence excitation spectroscopy that the confined excitons in the well play an important role in determining the lasing mechanism. The optical gain just above the lasing threshold is attributed to the recombination of an exciton accompanied by emission of one LO phonon. Far above threshold inelastic exciton-exciton scattering processes contribute significantly to the gain.
© EDP Sciences 1993