Le Journal de Physique IV
Volume 03, Numéro C5, Octobre 1993Third International Conference on Optics of Excitons in Confined
|Page(s)||C5-19 - C5-25|
Le Journal de Physique IV 03 (1993) C5-19-C5-25
Lifetime of excitons in GaAs quantum wellsB. SERMAGE1, S. LONG1, B. DEVEAUD2 and D.S. KATZER3
1 France Telecom, CNET, PAB, 196 avenue Henri Ravera, 92220 Bagneux, France
2 France Telecom, CNET, LAB, 22300 Lannion, France
3 Naval Research Laboratory, Washington, DC 20375, U.S.A.
Time resolved luminescence measurements under resonant excitation were performed at 10 K on the free exciton in very high quality GaAs-AlAs quantum wells. At resonance, the luminescence intensity is increased by two orders of magnitude, and the decay is short. The radiative lifetime of the excitons in the radiant states is about 18 ps in agreement with the theory of Hanamura and Andréani.
© EDP Sciences 1993