| Numéro |
J. Phys. IV France
Volume 03, Numéro C2, Juillet 1993
International Workshop on Electronic CrystalsECRYS - 93 |
|
|---|---|---|
| Page(s) | C2-255 - C2-258 | |
| DOI | https://doi.org/10.1051/jp4:1993251 | |
International Workshop on Electronic Crystals
ECRYS - 93
J. Phys. IV France 03 (1993) C2-255-C2-258
DOI: 10.1051/jp4:1993251
1 Institut für Angewandte Physik, Universität Karlsruhe, Kaiserstr. 12, 76131 Karlsruhe, Germany
2 Centre de Recherches sur les Très Basses Températures, CNRS, BP.166X, 38042 Grenoble cedex, France
3 Institut de Physique Appliquée, EPF de Lausanne, PHB Ecublens, 1015 Lausanne, Switzerland
© EDP Sciences 1993
ECRYS - 93
J. Phys. IV France 03 (1993) C2-255-C2-258
DOI: 10.1051/jp4:1993251
Temperature dependence of the Peierls gap in (TaSe4)2I
D. BERNER1, G. SCHEIBER1, A. GAYMANN1, H.M. GESERICH1, P. MONCEAU2 and F. LÉVY31 Institut für Angewandte Physik, Universität Karlsruhe, Kaiserstr. 12, 76131 Karlsruhe, Germany
2 Centre de Recherches sur les Très Basses Températures, CNRS, BP.166X, 38042 Grenoble cedex, France
3 Institut de Physique Appliquée, EPF de Lausanne, PHB Ecublens, 1015 Lausanne, Switzerland
Abstract
We have determined the longitudinal optical conductivity of (TaSe4)2I in the energy range from 50 meV to 2 eV at different temperatures between 15 K and 420 K. We find a clear evidence that the free carriers are condensed into a charge density wave ground state not only below the transition temperature of 263 K but also at higher temperature up to the limits of the chemical stability of this compound.
© EDP Sciences 1993