| Numéro |
J. Phys. IV France
Volume 03, Numéro C2, Juillet 1993
International Workshop on Electronic CrystalsECRYS - 93 |
|
|---|---|---|
| Page(s) | C2-197 - C2-200 | |
| DOI | https://doi.org/10.1051/jp4:1993240 | |
International Workshop on Electronic Crystals
ECRYS - 93
J. Phys. IV France 03 (1993) C2-197-C2-200
DOI: 10.1051/jp4:1993240
1 Department of Physics, Hokkaido University, Sapporo 060, Japan
2 Department of Material Science, Himeji Institute of Technology, Kanaji, Kamigohri, Hyogo 678-12, Japan
© EDP Sciences 1993
ECRYS - 93
J. Phys. IV France 03 (1993) C2-197-C2-200
DOI: 10.1051/jp4:1993240
Transient voltage oscillation, narrow-band-noise and non-linear conductivity in SDW : (TMTSF)2AsF6
M. NAGASAWA1, T. SAMBONGI1, K. NOMURA1 and H. ANZAI21 Department of Physics, Hokkaido University, Sapporo 060, Japan
2 Department of Material Science, Himeji Institute of Technology, Kanaji, Kamigohri, Hyogo 678-12, Japan
Abstract
Transient voltage oscillation was observed in the spin-density wave phase of (TMTSF)2AsF6. Its frequency is proportional to the non-ohmic current. In high electric field, current-field relation becomes irregular and transient oscillation diminishes. The bistability of the density-wave conductivity proposed by Littlewood is likely to be realized.
© EDP Sciences 1993