Spontaneous resistance fluctuations and their evolution near the threshold in o-TaS3 below the liquid-nitrogen temperature

V. Ya. POKROVSKII; S.V. ZAITSEV-ZOTOV; P. MONCEAU; F. Ya. NAD'

doi:doi:10.1051/jp4:1993238

Numéro		J. Phys. IV France Volume 03, Numéro C2, Juillet 1993 International Workshop on Electronic Crystals ECRYS - 93


Page(s)		C2-189 - C2-192
DOI		https://doi.org/10.1051/jp4:1993238

International Workshop on Electronic Crystals
ECRYS - 93

J. Phys. IV France 03 (1993) C2-189-C2-192
DOI: 10.1051/jp4:1993238

Spontaneous resistance fluctuations and their evolution near the threshold in o-TaS₃ below the liquid-nitrogen temperature

V. Ya. POKROVSKII¹, S.V. ZAITSEV-ZOTOV², P. MONCEAU³ and F. Ya. NAD'¹

¹ Institute of Radioengineering and Electronics
² Institute of Radioengineering and Electronics of RAS, Mokhovaya 11, 103907 Moscow Russia
³ Centre de Recherches sur les Très Basses Températures, CNRS, BP. 166X 38042 Grenoble cedex, France

Abstract
It is found that below 80 K o-TaS₃ demonstrates spontaneous resistance fluctuations growing when the temperature is decreasing. The average relaxation time, τ₀, obtained from the noise spectra demonstrates activated behavior, τ₀ α exp(w/T), w ≈ 1300 K for 50 < T < 70 K. In the vicinity of the threshold the average frequency of the fluctuations, f₀, grows with increasing the voltage, revealing onset of the Fröhlich current. log(f₀) is found to be proportional to the increase of conductivity. We conclude that the main source of the resistance fluctuations are thermally-assisted jumps of dislocations of the charge-density waves.