| Numéro |
J. Phys. IV France
Volume 01, Numéro C7, Décembre 1991
2nd International ConferenceLaser M2P |
|
|---|---|---|
| Page(s) | C7-297 - C7-301 | |
| DOI | https://doi.org/10.1051/jp4:1991780 | |
2nd International Conference
Laser M2P
J. Phys. IV France 01 (1991) C7-297-C7-301
DOI: 10.1051/jp4:1991780
1 Laboratoire d'Automatique et d'Analyse des Systèmes du CNRS, 7 avenue du Colonel Roche, F-31077 Toulouse Cedex, France
2 On leave from Departamento de Fisica Aplicada C-IV, Universidad Autonoma de Madrid, SP-28048 Madrid Spain
© EDP Sciences 1991
Laser M2P
J. Phys. IV France 01 (1991) C7-297-C7-301
DOI: 10.1051/jp4:1991780
OPTICAL CHARACTERIZATION OF Nd3+ DOPED CaF2 LAYERS GROWN BY MOLECULAR BEAM EPITAXY
L.E. BAUSA1, 2, R. LEGROS1 and A. MUNOZ-YAGUE11 Laboratoire d'Automatique et d'Analyse des Systèmes du CNRS, 7 avenue du Colonel Roche, F-31077 Toulouse Cedex, France
2 On leave from Departamento de Fisica Aplicada C-IV, Universidad Autonoma de Madrid, SP-28048 Madrid Spain
Abstract
Nd3+ doped CaF2 monocrystalline films have been grown by molecular beam epitaxy using CaF2 and NdF3 evaporation on CaF2 substrates. The effect of Nd3+ concentration is studied by means of the photoluminescence signal of Nd3+ ions. The results can be compared favourably with those obtained on CaF2:Nd bulk crystals. For a given Nd3+ concentration a lower quantity of Nd3+ aggregate centers is observed. Nd3+ ions can therefore be efficiently incorporated as isolated Nd3+-F- centers up to a concentration of 6 wt % Nd3+ without emission quenching of their associated line at 1045.7 nm.
© EDP Sciences 1991