OPTICAL CHARACTERIZATION OF Nd3+ DOPED CaF2 LAYERS GROWN BY MOLECULAR BEAM EPITAXY

L.E. BAUSA; R. LEGROS; A. MUNOZ-YAGUE

doi:doi:10.1051/jp4:1991780

Numéro		J. Phys. IV France Volume 01, Numéro C7, Décembre 1991 2nd International Conference Laser M2P


Page(s)		C7-297 - C7-301
DOI		https://doi.org/10.1051/jp4:1991780

2nd International Conference
Laser M2P

J. Phys. IV France 01 (1991) C7-297-C7-301
DOI: 10.1051/jp4:1991780

OPTICAL CHARACTERIZATION OF Nd³⁺ DOPED CaF₂ LAYERS GROWN BY MOLECULAR BEAM EPITAXY

L.E. BAUSA^{1, 2}, R. LEGROS¹ and A. MUNOZ-YAGUE¹

¹ Laboratoire d'Automatique et d'Analyse des Systèmes du CNRS, 7 avenue du Colonel Roche, F-31077 Toulouse Cedex, France
² On leave from Departamento de Fisica Aplicada C-IV, Universidad Autonoma de Madrid, SP-28048 Madrid Spain

Abstract
Nd³⁺ doped CaF₂ monocrystalline films have been grown by molecular beam epitaxy using CaF₂ and NdF₃ evaporation on CaF₂ substrates. The effect of Nd³⁺ concentration is studied by means of the photoluminescence signal of Nd³⁺ ions. The results can be compared favourably with those obtained on CaF₂:Nd bulk crystals. For a given Nd³⁺ concentration a lower quantity of Nd³⁺ aggregate centers is observed. Nd³⁺ ions can therefore be efficiently incorporated as isolated Nd³⁺-F^- centers up to a concentration of 6 wt % Nd³⁺ without emission quenching of their associated line at 1045.7 nm.