J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
|Page(s)||C2-571 - C2-578|
J. Phys. IV France 02 (1991) C2-571-C2-578
INFLUENCE OF CH4 AND Ar ON THE MORPHOLOGIES OF Al2O3 - CVD COATINGSM. DANZINGER, J. PENG, R. HAUBNER and B. LUX
Institute for Chemical Technology of Inorganic Materials, Technical University Vienna, A-1060 Vienna, Austria
The influence of CH4 and Ar addition to the AlCl3/CO2/H2 system on the morphology and grain size of Al2O3 CVD deposition was examined. The Al2O3 growth rate decreased at a CH4 concentration of 10 vol%. High concentrations of CH4 caused fine grained Al2O3 crystals but these coatings were porous and consisted of branched crystals. High Ar additions of more than 27 mol% led to the formation of more monolytic Al2O3 coatings. The simultaneous addition of CH4/Ar mixtures during deposition allowed the formation of uniform, compact and extremely fine grained Al2O3 coatings. The adhesion of the Al2O3 coatings was measured by a simple Rockwell indentation test. The grain refinement is explained by a carbon codeposition resulting from methane pyrolysis.
© EDP Sciences 1991