| Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
|
|
|---|---|---|
| Page(s) | C2-413 - C2-420 | |
| DOI | https://doi.org/10.1051/jp4:1991250 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-413-C2-420
DOI: 10.1051/jp4:1991250
1 Laboratoire de Génie Chimique, U.R.A 192 C.N.R.S, c/o E.N.S.I.G.C, F-31078 Toulouse, France
2 Institut de Science et de Génie des Matériaux et Procédés, C.N.R.S, Odeillo, F-66120 Font Romeu, France
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-413-C2-420
DOI: 10.1051/jp4:1991250
PLASMA DEPOSITION OF SILICON NITRIDE
C. FAKIH1, R.S. BES1, B. ARMAS2 and D. THENEGAL21 Laboratoire de Génie Chimique, U.R.A 192 C.N.R.S, c/o E.N.S.I.G.C, F-31078 Toulouse, France
2 Institut de Science et de Génie des Matériaux et Procédés, C.N.R.S, Odeillo, F-66120 Font Romeu, France
Abstract
This paper reports on the preparation and characterization of thin films of silicon nitride deposited on heated silicon substrates from Si (CH3)4-NH3-H2 mixtures activated at room temperature by an a.c. discharge at low frequency. The films were deposited at 800°C. Deposition rate as well as refractive index were measured and several parameters were systematically varied, including deposition time (1-3 h), total gas flow rate, chamber pressure (20-45 kPa), peak driving voltage (8-12 kV) and frequency (400-600Hz). The composition of the films was studied using transmission electron microscopy (106 V), Auger spectroscopy and infrared spectroscopy.
© EDP Sciences 1991