Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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Page(s) | C2-373 - C2-380 | |
DOI | https://doi.org/10.1051/jp4:1991245 |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-373-C2-380
DOI: 10.1051/jp4:1991245
Technological University of Sofia, Department of Semiconductors, 1756 Sofia, Kliment Ohridski St. 8, Bulgaria
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-373-C2-380
DOI: 10.1051/jp4:1991245
LASER INDUCED DIRECT WRITING OF ALUMINIUM
V. SHANOV, B. IVANOV and C. POPOVTechnological University of Sofia, Department of Semiconductors, 1756 Sofia, Kliment Ohridski St. 8, Bulgaria
Abstract
Maskless configuration of aluminium has been grown by using visible light of a copper laser for pyrolytic decomposition of trimethylaluminium (TMA). The process was carried out in vacuum or argon and hydrogen atmosphere at partial pressure of TMA 0,5 and 5 mbar. The crystalline structure of the coating shows well defined grains. This morphology was observed for the first time by using pulsed visible laser. The Auger electron spectra indicate the presence of bonded oxygen and carbon incorporated into the aluminium. These elements cannot be totally avoided but their concentration can be reduced at the established optimum conditions to obtain low resistivity of the layer.
© EDP Sciences 1991