| Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-193 - C2-199 | |
| DOI | https://doi.org/10.1051/jp4:1991224 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-193-C2-199
DOI: 10.1051/jp4:1991224
1 Department of Electronic and Electrical Engineering, University of Salford, GB-Salford M5 4WT, Great-Britain
2 Department of Inorganic Chemistry, University of Oxford, South Parks Road, GB-Oxford OX1 3QR, Great-Britain
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-193-C2-199
DOI: 10.1051/jp4:1991224
THE APPLICATION OF A SUPERSONIC MOLECULAR BEAM SCATTERING SYSTEM TO UNDERSTANDING CVD PROCESSES
W. AHMED1, J.S. FOORD2, N.K. SINGH2 and R.D. PILKINGTON11 Department of Electronic and Electrical Engineering, University of Salford, GB-Salford M5 4WT, Great-Britain
2 Department of Inorganic Chemistry, University of Oxford, South Parks Road, GB-Oxford OX1 3QR, Great-Britain
Abstract
A detailed description of a supersonic molecular beam scattering system for investigating surface processes involved in chemical vapour deposition (CVD) is given. The system can be used for both the carrying out of depositions and the simultaneous study of reaction mechanisms using modulated molecular beam relaxation spectroscopy and other surface science techniques. The advantages of this system for real time in-situ analysis of reaction mechanisms compared to previous approaches are discussed. The application of this system to the deposition and study of GaAs is discussed. With the increasing demand for improved layer quality, it is becoming more important to develop, control and understand the new generation of CVD processes.
© EDP Sciences 1991