| Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-963 - C2-968 | |
| DOI | https://doi.org/10.1051/jp4:19912118 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-963-C2-968
DOI: 10.1051/jp4:19912118
Department of Electronic Science, Jilin University, 79 Jiefang Road, Changchun 130021, P.R. China
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-963-C2-968
DOI: 10.1051/jp4:19912118
A STUDY OF GAS SENSING PROPERTIES OF OXIDE MULTILAYER THIN FILMS
D. GUORUIDepartment of Electronic Science, Jilin University, 79 Jiefang Road, Changchun 130021, P.R. China
Abstract
The film structures and gas sensing properties of Fe2 O3-TiO2-SnO2 oxide multilayer thin film deposited onto the silicon or the ceramic substrates have been studied in this paper. The unique double sensing characteristic of the multilayer thin films had high sensitivity and excellent selectivity to NOx and C2H5OH gas was found. It is considered to be caused by the heterojunction and sieving effects.
© EDP Sciences 1991