J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
|Page(s)||C2-962 - C2-962|
J. Phys. IV France 02 (1991) C2-962-C2-962
Sb (P, As OR F) - DOPED SnO2 FILMS PREPARED BY MOCVDW. LUO, C. TAN, P. REN and Z. TAN
Qingdao Institute of Chemical Technology, Center for Functional Materials Research, 53 Zhengzhou Road, Qingdao, 266042, China
Metallorganic chemical vapour deposition (MOCVD) is employed for the growth of Sb(P, As or F) doped thin films of SnO2. Using (CH3)4Sn (TMT) as a tin source, oxygen-argon mixture as the carrier gas and Sb (P, As or F) as dopants, we have obtained four kinds of doped SnO2 films on different substrates. These films (thickness 102-103Å) possess sheet resistances of 30-40 [MATH] and transmissivities up to 85-95% in the visible spectral region. The experiments show that the doping causes a change of orientation of SnO2 crystallites. The films can exhibit a rapid transition from being polycrystalline to becoming amorphous when excess dopant is used. The structure for the four kinds of doped films and the photoelectrochemical bahaviour on silicon single crystals as electrodes are also reported. The experiments show the photoresponse of silicon photocathodes with doped films is larger than that without doping. The silicon electrode coated with the doped film as a heterostructure photocathode for photoelectrolysis of water can increase the potential of hydrogen evolved towards the positive direction.
© EDP Sciences 1991