| Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-961 - C2-961 | |
| DOI | https://doi.org/10.1051/jp4:19912116 | |
J. Phys. IV France 02 (1991) C2-961-C2-961
DOI: 10.1051/jp4:19912116
STUDIES OF In2O3 - Sn FILMS GROWN BY MOCVD
W. LUO, P. REN, C. TAN and Z. TANQingdao Institute of Chemical Technology, Center for Functional Materials Research, 53 Zhengzhou Road, Qingdao, 266042 China
Abstract
In this paper, the metallorganic chemical vapour deposition (MOCVD) for the growth of thin films of In2O3:Sn is described. Through pyrolysis and oxidation of indium acetylacetonate using (CH3)4SN as a tin source in a nitrogen-oxygen atmosphere, thin films are deposited on hot 410-500°C glass and (111) silicon single crystal substrates. Characterisation of the films by X-ray diffraction, SEM and UV absorption spectra are reported. The films (thickness ~ 1000Å) show a minimum sheet resistance value of [MATH]. The structure and morphology of the In2O3:Sn films are also described. Application of these films has been suggested for antireflection coatings in solar cells. They can be used to improve the conversion efficiency of solar energy.
© EDP Sciences 1991