| Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-931 - C2-937 | |
| DOI | https://doi.org/10.1051/jp4:19912112 | |
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
J. Phys. IV France 02 (1991) C2-931-C2-937
DOI: 10.1051/jp4:19912112
AEA Technology, Building 552, Harwell Laboratory, Didcot, Oxon OX11 0RA, Great Britain
© EDP Sciences 1991
J. Phys. IV France 02 (1991) C2-931-C2-937
DOI: 10.1051/jp4:19912112
HIGH TEMPERATURE STRESS MEASUREMENTS IN CVD DIAMOND FILMS
C. JOHNSTON, A. CROSSLEY, A.M. JONES, P.R. CHALKER, F.L. CULLEN and I.M. BUCKLEY-GOLDERAEA Technology, Building 552, Harwell Laboratory, Didcot, Oxon OX11 0RA, Great Britain
Abstract
Low pressure CVD diamond films are intended for application in the optics, biomedical, electronics and engineering industries. In a number of applications, it is important to know the growth stresses in the films at room temperature and, in addition, the stresses generated in the films as a function of temperature. The results in this paper will show the in situ measurement of stresses in CVD diamond films as a function of temperature up to 750 °C. The principal measurement techniques are Raman spectroscopic analysis and the X-ray diffraction (XRD) sin2ψ method.
© EDP Sciences 1991