J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
|Page(s)||C2-923 - C2-930|
J. Phys. IV France 02 (1991) C2-923-C2-930
INFLUENCE OF THE FILAMENT MATERIAL ON LOW-PRESSURE HOT-FILAMENT CVD DIAMOND DEPOSITIONS. OKOLI, R. HAUBNER and B. LUX
Institute for Chemical Technology of Inorganic Materials, Technical University Vienna, A-1060, Vienna, Austria
The behavior of Re, Ta and W filaments during low-pressure hot-filament CVD diamond synthesis was investigated. With proper matching of the deposition parameters it was possible to produce uniform, well faceted diamond films on cemented carbide substrates using all three filament materials. Carbon layers were formed only on Ta filaments when using 1.0 and 2.0 % CH4 at filament temperatures below 2200 °C. No carbon layer formation was observed on Re and W filaments under these conditions. Between 2000 and 2400 °C the mechanical stability of the Re filaments was superior to that of the Ta filaments as well as that of the W filaments. The W filaments showed the greatest deformation during the carburization.
© EDP Sciences 1991