J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
|Page(s)||C2-915 - C2-921|
J. Phys. IV France 02 (1991) C2-915-C2-921
EVALUATING THE INFLUENCE OF GROWTH PARAMETERS ON CVD DIAMOND DEPOSITION USING FACTORIAL ANALYSISC. JOHNSTON, C.F. AYRES and P.R. CHALKER
AEA Technology, Building 552, Harwell Laboratory, Didcot, Oxon OX11 ORA, Great Britain
The deposition of diamond films by low pressure CVD methods has been demonstrated using a number of thermal and plasma assisted CVD techniques. Addition of oxygen to the methane-hydrogen feedstock has been reported to improve the quality of diamond deposited and decrease the temperature at which diamond deposition is feasible. Oxygen also effects the growth rate and possibly the uniformity of the film. In this paper an experimental design methodology, factorial analysis, is presented which is, in principle, applicable to any CVD process. The factorial analysis identifies the most influential growth parameters and any interactions between independently variable parameters. The analysis has been applied to diamond growth using CH4-O2-H2 mixtures in a microwave assisted CVD process. The effect of oxygen addition on growth rate and film quality is discussed.
© EDP Sciences 1991