| Numéro |
J. Phys. IV France
Volume 02, Numéro C2, Septembre 1991
Proceedings of the Eighth European Conference on Chemical Vapour Deposition / Actes de la 8ème Confèrence Européenne sur les Dépôts Chimiques en Phase Gazeuse
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| Page(s) | C2-857 - C2-864 | |
| DOI | https://doi.org/10.1051/jp4:19912102 | |
J. Phys. IV France 02 (1991) C2-857-C2-864
DOI: 10.1051/jp4:19912102
SELECTIVE R.T.L.P.C.V.D. OF TUNGSTEN BY SILANE REDUCTION ON PATTERNED PPQ/Si WAFERS
A. BOUTEVILLE1, T. CHARRIER1, J.C. REMY1, J. PALLEAU2 and J. TORRES21 Laboratoire P.C.M.T. Université d'Angers, 2, Bd Lavoisier, F-49045 Angers, France
2 C.N.E.T., C.N.S., T.C.S., Chemin du vieux chêne, BP. 98, F-38243 Meylan, France
Abstract
Organic dielectrics are an attractive alternative to silicon oxide commonly used in multilevel metallization schemes. In this work, tungsten films are selectively deposited on substrates covered by patterned organic dielectric through a Rapid Thermal Low Pressure Chemical Vapor Deposition system by using the WF6-SiH4-H2 gas phase. In the entire range of parameters, α-W is the only phase obtained. The resistivity of the films is about 20 µΩ.cm. The SiH4/WF6 ratio and the deposition temperature appear to be the decisive parameters. With determined optimal experimental conditions (SiH4/WF6 ratio of 3/4 and deposition temperature of 350°C) W films are deposited with a good selectivity at 400 nm/min. These characteristics are improved when the etched area/wafer area ratio (called "load ratio") decreases. Adherence problems limit the thickness of the deposited W films. The maximum thickness is higher when deposition occurs on chromium covered silicon rather than on bare silicon.
© EDP Sciences 1991