Journal de Physique IV

High breakdown n⁺-GaAs/δ-doped(p⁺)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD

W.C. Liu, W.L. Chang, H.J. Pan, J.Y. Chen, W.C. Wang, K.H. Yu and S.C. Feng

J. Phys. IV France, 09 PR8 (1999) Pr8-1171-Pr8-1177

DOI: 10.1051/jp4:19998146

W.C. Liu

W.L. Chang

H.J. Pan

J.Y. Chen

W.C. Wang

K.H. Yu

S.C. Feng

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