Journal de Physique IV

GROWTH MECHANISM OF EPITAXIAL SILICON CARBIDE PRODUCED USING RAPID THERMAL CVD

F.H. RUDDELL, B.M. ARMSTRONG and H.S. GAMBLE

J. Phys. IV France, 02 C2 (1991) C2-823-C2-830

DOI: 10.1051/jp4:1991297

F.H. RUDDELL

B.M. ARMSTRONG

H.S. GAMBLE

Articles written by ALL the selected authors (AND)

Articles written by ANY OF the selected authors (OR)