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Cited article:

Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3

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Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped β -Ga2O3 Schottky rectifiers

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Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers

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Impact of electron injection on carrier transport and recombination in unintentionally doped GaN

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Journal of Applied Physics 128 (8) (2020)
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Impact of Electron Injection and Temperature on Minority Carrier Transport in Alpha-Irradiated ß-Ga2O3 Schottky Rectifiers

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Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length

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Applied Physics Letters 112 (8) (2018)
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Electron beam induced current profiling of ZnO p-n homojunctions

L. Chernyak, C. Schwarz, E. S. Flitsiyan, et al.
Applied Physics Letters 92 (10) 102106 (2008)
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Electron irradiation-induced increase of minority carrier diffusion length, mobility, and lifetime in Mg-doped AlN∕AlGaN short period superlattice

O. Lopatiuk-Tirpak, L. Chernyak, B. A. Borisov, et al.
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Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-GaN

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Studies of minority carrier diffusion length increase in p-type ZnO:Sb

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Electron-beam-induced current and cathodoluminescence studies of thermally activated increase for carrier diffusion length and lifetime in n-type ZnO

O. Lopatiuk, L. Chernyak, A. Osinsky, J. Q. Xie and P. P. Chow
Applied Physics Letters 87 (16) 162103 (2005)
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Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level

M. Kittler, C. Ulhaq‐Bouillet and V. Higgs
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On the origin of EBIC defect contrast in silicon. A reflection on injection and temperature dependent investigations

M. Kittler and W. Seifert
Physica Status Solidi (a) 138 (2) 687 (1993)
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