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Metal Impurities in Silicon- and Germanium-Based Technologies
Cor Claeys and Eddy Simoen Springer Series in Materials Science, Metal Impurities in Silicon- and Germanium-Based Technologies 270 125 (2018) https://doi.org/10.1007/978-3-319-93925-4_5
Dislocation Density Reduction During Impurity Gettering in Multicrystalline Silicon
Effects of copper and oxygen precipitation during thermal oxidation of silicon: An electron‐beam‐induced current study
A. Correia, D. Ballutaud, A. Boutry‐Forveille and J.‐L. Maurice Journal of Applied Physics 78(11) 6543 (1995) https://doi.org/10.1063/1.360475
Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level