J. Phys. IV France
Volume 137, November 2006
Page(s) 223 - 226
Published online 23 December 2006
35th Winter School on Wave and Quantum Acoustics
J. Bodzenta, M. Dzida and T. Pustelny
J. Phys. IV France 137 (2006) 223-226

DOI: 10.1051/jp4:2006137046

The acoustic method of investigating the electrical carrier mobility of the real GaP:Te (110) surface*

T. Pustelny and B. Pustelny

Institute of Physics, Silesian University of Technology, ul. Krzywoustego 2, 44-100 Gliwice, Poland

(Published online 23 December 2006)

The acoustic method of investigating the carrier mobility in the near-surface region of a semiconductor is presented. In this method the transverse acoustoelectric voltage versus the absorbed surface acoustic wave power was measured to determine nondestructively the carrier mobilites. In the layered structure: piezoelectric - semiconductor, the majority and minority carrier mobilities can be determined basing on the field effect. Single GaP:Te(110) crystals have been investigated after various kinds pf surface treatment. The carrier mobility values range from 75 to 120 (cm2/ V s). The results determined by means of the TAV method are in satisfactory agreement with the results obtained by Hall measurements.

© EDP Sciences 2006