| Issue |
J. Phys. IV France
Volume 137, November 2006
|
|
|---|---|---|
| Page(s) | 223 - 226 | |
| DOI | https://doi.org/10.1051/jp4:2006137046 | |
| Published online | 23 December 2006 | |
35th Winter School on Wave and Quantum Acoustics
J. Bodzenta, M. Dzida and T. Pustelny
J. Phys. IV France 137 (2006) 223-226
DOI: 10.1051/jp4:2006137046
Institute of Physics, Silesian University of Technology, ul. Krzywoustego 2, 44-100 Gliwice, Poland
(Published online 23 December 2006)
© EDP Sciences 2006
J. Bodzenta, M. Dzida and T. Pustelny
J. Phys. IV France 137 (2006) 223-226
DOI: 10.1051/jp4:2006137046
The acoustic method of investigating the electrical carrier mobility of the real GaP:Te (110) surface*
T. Pustelny and B. PustelnyInstitute of Physics, Silesian University of Technology, ul. Krzywoustego 2, 44-100 Gliwice, Poland
(Published online 23 December 2006)
Abstract
The acoustic method of investigating the carrier mobility in the
near-surface region of a semiconductor is presented. In this method
the transverse acoustoelectric voltage versus the absorbed surface
acoustic wave power was measured to determine nondestructively the
carrier mobilites. In the layered structure: piezoelectric -
semiconductor, the majority and minority carrier mobilities can be
determined basing on the field effect. Single GaP:Te(110) crystals
have been investigated after various kinds pf surface treatment. The
carrier mobility values range from 75 to 120 (cm2/ V s). The
results determined by means of the TAV method are in satisfactory
agreement with the results obtained by Hall measurements.
© EDP Sciences 2006