| Issue |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 295 - 299 | |
| DOI | https://doi.org/10.1051/jp4:2006132056 | |
| Published online | 11 March 2006 | |
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 295-299
DOI: 10.1051/jp4:2006132056
Polarized photoluminescence of the of GaInP2 layers grown on GaAs and Ge substrates by MOVPE technique
T. Prutskij1, C. Pelosi2 and R. Brito-Orta31 Instituto de Ciencias, BUAP, 72000 Puebla, Pue., México
2 IMEM/CNR, 43010 Parma, Italy
3 Instituto de Física BUAP, 72570 Puebla, Pue., México
Abstract
Photoluminescent properties of GaInP2 films grown by
metal-organic vapor phase epitaxy (MOVPE) on two different
substrates (GaAs and Ge) are studied. The grown GaInP2 films
were nearly lattice matched to GaAs, had the same thickness of
approximately 0.5 
m and different values of ordering
parameter. Photoluminescence (PL) measurements were performed in a
wide temperature range (10 - 300 K) for polarization of the
emitted radiation along the [011] and [ 0
1] directions.
The temperature dependence of the photoluminescence intensity ratio
for two polarizations was calculated and found experimentally. To
estimate the value of the energy separation between the heavy-hole
and light-hole bands a simulation of the spectra was realized using
parabolic bands and Boltzmann statistics.
© EDP Sciences 2006