| Issue |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 263 - 267 | |
| DOI | https://doi.org/10.1051/jp4:2006132050 | |
| Published online | 11 March 2006 | |
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 263-267
DOI: 10.1051/jp4:2006132050
Wet chemical nitridation of GaAs(001) surface
V.L. Berkovits1, A.N. Karpenko1, L. Masson2 and V.P. Ulin11 A. F. Ioffe Physico-Technical Institute, 194021 Saint Petersburg, Russia
2 CRMCN-UPR CNRS 7251, Campus de Luminy, Case 901, 13288 Marseille Cedex 09, France
Abstract
Auger Electron Spectroscopy and Scanning Tunnelling Microscopy were
used to study the chemical and structural properties of the
GaAs(001) surface after wet chemical nitridation by
hydrazine-sulfide solutions. AES results show that the as-nitrided
surface is covered by a thin film formed by a layer of nitrogen
atoms strongly bonded with the substrate, and by a layer of residual
impurities above it. The residual layer consists of oxygen- and
sulfur-containing compounds, which are removed by annealing at near
450 and 520
C respectively. The STM relief of the annealed
surface is smooth with the rms roughness of the order of 0.4 nm. It
is formed by numerous grain-like features of average lateral size
near 5 nm and of 0.5 nm of height. Possible origin of the features
is discussed.
© EDP Sciences 2006