| Issue |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 255 - 258 | |
| DOI | https://doi.org/10.1051/jp4:2006132048 | |
| Published online | 11 March 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 255-258
DOI: 10.1051/jp4:2006132048
1 Department of Solid State Physics, University of Debrecen, PO Box 2, 4010 Debrecen, Hungary
2 L2MP, UMR 6137 - CNRS, Université Paul Cézanne, 13397 Marseille Cedex 20, France
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 255-258
DOI: 10.1051/jp4:2006132048
AES measurements of Sb mass transport in amorphous Si thin films
J. Nyéki1, 2, C. Girardeaux2, A. Rolland2 and J. Bernardini21 Department of Solid State Physics, University of Debrecen, PO Box 2, 4010 Debrecen, Hungary
2 L2MP, UMR 6137 - CNRS, Université Paul Cézanne, 13397 Marseille Cedex 20, France
Abstract
Sb diffusion in an amorphous Si thin film and Sb segregation
kinetics onto the Si film were studied by Auger electron
spectroscopy in the temperature range of 600-723 K. Segregation
factors and antimony diffusivities were estimated from the
experimental kinetics curves, on the basis of the Lea and Seah
model, the Sb bulk concentration in Si films being studied by TEM.
Sb diffusivities in amorphous Si proved to be 10-12 orders of
magnitude higher than that of measured in crystalline Si, the
pre-exponential factors being of the same order of magnitude.
© EDP Sciences 2006