Issue |
J. Phys. IV France
Volume 132, March 2006
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Page(s) | 171 - 175 | |
DOI | https://doi.org/10.1051/jp4:2006132033 | |
Published online | 11 March 2006 |
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 171-175
DOI: 10.1051/jp4:2006132033
IV characteristics in structures prepared by tip induced oxidation
V. Cambel, J. Soltýs, J. Martaus and M. MoskoInstitute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia
Abstract
We have studied transport of a two-dimensional electron gas through
an energy barrier prepared by local anodic oxidation with an AFM
tip. Experimental IV curves are first explained by a simple
model in which the built-in potential is of tapered shape. Then we
use computer simulations, ensemble Monte Carlo method with molecular
dynamics included, to explain the details of the 2D electron
transport in the system. The simulations show the influence of the
carrier concentration, applied voltage, and barrier width, on the
effective barrier height. We show that few ionized donors can
influence the 2D electron transport in the system significantly. In
a similar way the confinement of 2D electrons in nanometer-sized
devices (quantum dots, wires, single-electron transistors) can be
reduced?.
© EDP Sciences 2006