| Issue |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 141 - 145 | |
| DOI | https://doi.org/10.1051/jp4:2006132028 | |
| Published online | 11 March 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 141-145
DOI: 10.1051/jp4:2006132028
Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University, 3190 Gofuku, Toyama 930-8555, Japan
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 141-145
DOI: 10.1051/jp4:2006132028
Formation of nanoclusters containing In and Sb atoms
M. Saito, H. Sasaki, T. Sasaki, M. Mori, T. Tambo and C. TatsuyamaDepartment of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University, 3190 Gofuku, Toyama 930-8555, Japan
Abstract
It have been reported that in deposition onto the Si(111)-(
) reconstruction under suitable conditions resulted in the
formation of the ordered In nanocluster array structure. Such
ordered array structures of metal nanoclusters are promising
materials for an ultra-high density recording and nanocatalysis,
etc. In the present report, we deposit Sb onto the In
nanocluster array structure on the Si(111)-()
reconstructed surface, and observe clusters containing In and Sb
atoms by STM.
© EDP Sciences 2006