Issue |
J. Phys. IV France
Volume 132, March 2006
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Page(s) | 23 - 29 | |
DOI | https://doi.org/10.1051/jp4:2006132006 | |
Published online | 11 March 2006 |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 23-29
DOI: 10.1051/jp4:2006132006
École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 23-29
DOI: 10.1051/jp4:2006132006
Synchrotron light in semiconductor research: Three decades of revolution
G. MargaritondoÉcole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
Abstract
Since the late 1960s, synchrotron-based experimental techniques have
been playing a key role in semiconductor research. Major milestones
include the observation of intrinsic and extrinsic surface and
interface states, the study of interface formation processes, band
structure mapping and, more recently, the study of exotic
correlation effects in low-dimensional systems. We briefly review
these developments with special emphasis on the contributions of the
University of Wisconsin Synchrotron Radiation Center (SRC) and on
the corresponding environment.
© EDP Sciences 2006