Issue
J. Phys. IV France
Volume 132, March 2006
Page(s) 23 - 29
DOI https://doi.org/10.1051/jp4:2006132006
Published online 11 March 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 23-29

DOI: 10.1051/jp4:2006132006

Synchrotron light in semiconductor research: Three decades of revolution

G. Margaritondo

École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland


Abstract
Since the late 1960s, synchrotron-based experimental techniques have been playing a key role in semiconductor research. Major milestones include the observation of intrinsic and extrinsic surface and interface states, the study of interface formation processes, band structure mapping and, more recently, the study of exotic correlation effects in low-dimensional systems. We briefly review these developments with special emphasis on the contributions of the University of Wisconsin Synchrotron Radiation Center (SRC) and on the corresponding environment.



© EDP Sciences 2006