Functional $\pi$-donors with no symmetry and Mott physics

P. Batail; K. Heuzé; S.A. Baudron; M. Fourmigué; C. Coulon; R. Clérac; E. Canadell; V. Laukhin; P. Auban-Senzier; R. Melzi; P. Wzietek; D. Jérome

doi:doi:10.1051/jp4:2005131078

Issue		J. Phys. IV France Volume 131, December 2005


Page(s)		307 - 311
DOI		https://doi.org/10.1051/jp4:2005131078
Published online		18 January 2006

International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 307-311
DOI: 10.1051/jp4:2005131078

Functional $\pi$ -donors with no symmetry and Mott physics

P. Batail^{1, 0}, K. Heuzé¹, S.A. Baudron¹, M. Fourmigué¹, C. Coulon², R. Clérac², E. Canadell³, V. Laukhin³, P. Auban-Senzier⁴, R. Melzi⁴, P. Wzietek⁴ and D. Jérome⁴

¹ Chimie, Ingénierie Moléculaire et Matériaux UMR 6200 CNRS-Université d'Angers, 2 boulevard Lavoisier, 49045 Angers, France
² Centre de Recherches Paul Pascal (CRPP-CNRS, UPR 8641), 115 avenue Dr. Schweitzer, 33600 Pessac, France
³ Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, 08193 Bellaterra, Spain
⁴ Laboratoire de Physique des Solides, UMR 8502 CNRS-Université de Paris-Sud, 91405 Orsay, France

Abstract
Crystal engineering principles serve as a guide for the design of quantum materials based on hydrogen-bond donor/acceptor-functionalized $\pi$ -donors of C₁ symmetry as illustrated by $\delta$ -(EDT-TTF-CONMe₂)₂AsF₆, a non-dimerized, 1/4-filled band Mott insulator and (EDT-TTF-CONH₂)₆[ Re₆Se₈(CN)₆] , a metallic molecular Kagomé ( $\rm S = 1/2$ )where molecular movements are coupled to a Mott localization.

Functional -donors with no symmetry and Mott physics

Functional $\pi$ -donors with no symmetry and Mott physics