Incoherent versus coherent interlayer transport in layered conductors under a magnetic field

M. Kartsovnik; S. Simonov; D. Andres; W. Biberacher; N. Kushch; H. Müller; I. Sheikin

doi:doi:10.1051/jp4:2005131067

Issue		J. Phys. IV France Volume 131, December 2005


Page(s)		265 - 268
DOI		https://doi.org/10.1051/jp4:2005131067
Published online		18 January 2006

International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 265-268
DOI: 10.1051/jp4:2005131067

Incoherent versus coherent interlayer transport in layered conductors under a magnetic field

M. Kartsovnik¹, S. Simonov², D. Andres¹, W. Biberacher¹, N. Kushch³, H. Müller⁴ and I. Sheikin⁵

¹ Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner-Strasse 8, 85748 Garching, Germany
² Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Russian Federation
³ Institute of Problems of Chemical Physics, Russian Academy of Sciences, 142432 Chernogolovka, Russian Federation
⁴ European Synchrotron Radiation Facility, 38043 Grenoble, France
⁵ Grenoble High Magnetic Field Laboratory, CNRS, BP. 166, 38042 Grenoble, France

Abstract
Comparative studies of the interlayer magnetoresistance of the layered organic conductor $\alpha$ -(BEDT-TTF)₂KHg(SCN)₄ as a function of the magnetic field orientation have been performed on different samples. The results obtained on the high quality crystal reveal a well defined three-dimensional Fermi surface and provide an evaluation of the interlayer transfer integral, $t_{\bot }\cong 0.04$ meV. The lower quality crystal exhibits a very different behavior which is most likely caused by the breakdown of the three-dimensional coherence, when the scattering rate $\tau ^{-1}$ exceeds the interlayer hopping rate $\sim t_{\bot }/\hbar$ .