International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 125-127
DOI: 10.1051/jp4:2005131029

Switching effects and sliding-induced charge transfer between the coexisting Q₁ and Q₂ charge density waves in NbSe₃

A. Ayari¹, R. Danneau^{1, 2}, H. Requardt³, L. Ortega⁴, J.E. Lorenzo⁴, P. Monceau¹, R. Currat², S. Brazovskii⁵ and G. Grübel<sup>3

1</sup>  Centre de Recherches sur les Très Basses Températures, Laboratoire Associé à l'Université Joseph Fourier, BP. 166, 38042 Grenoble Cedex 9, France
²  Institut Laue Langevin, BP. 156, 38042 Grenoble Cedex 9, France
³  European Synchrotron Radiation Facility, BP. 220, 38043 Grenoble, France
⁴  Laboratoire de Cristallographie, CNRS, BP. 166, 38042 Grenoble Cedex 9, France
⁵  Laboratoire de Physique Théorique et des Modèles Statistiques, CNRS$/$Université Paris-Sud, 91405 Orsay Cedex, France

Abstract
Using high-resolution x-ray scattering, in the temperature range 40 K <T<T_P2, we report evidence for a sliding-charge transfer between the two electronic reservoirs corresponding to the two CDWs in NbSe₃. We propose to use the same technique to correlate the switching behaviour which occurs in some NbSe₃ samples below 40 K with the presence of jointly commensurate regions of both CDWs with the lattice.

© EDP Sciences 2005