| Issue |
J. Phys. IV France
Volume 129, October 2005
|
|
|---|---|---|
| Page(s) | 241 - 243 | |
| DOI | https://doi.org/10.1051/jp4:2005129049 | |
J. Phys. IV France 129 (2005) 241-243
DOI: 10.1051/jp4:2005129049
Investigations of the optical and thermal parameters of porous silicon layers with the two wavelength photoacoustic method
M. Malinski1, L. Bychto1, A. Patryn1, J. Gibkes2, B.K. Bein2 and J. Pelzl21 Faculty of Electronic Technical University of Koszalin, 2 Sniadeckich St. 75-328 Koszalin, Poland
2 Solid State Spectroscopy, Exp. Phys. III, Ruhr-University, 44780 Bochum, Germany
Abstract
This paper presents the results of photoacoustic studies
of porous silicon layers formed on silicon substrates with the method of
constant current anodisation of c-Si in an aqueous solution of HF (50
wt %):H2O = 1:1. The aim of the study was to determine the thermal
diffusivity of the porous silicon layers and their optical absorption
coefficients with the photoacoustic method using two wavelengths of the
exciting light for the generation of thermal waves and measurement of
thermal and optical parameters.
© EDP Sciences 2005