Piezoelectric and elastic properties of new layered ferroelectric-semiconductor materials of Sn$_{\bf 2}$P$_{\bf 2}$S$_{\bf 6}$ family

V. Samulionis; J. Banys; Yu. Vysochanskii

doi:doi:10.1051/jp4:2005126028

Issue		J. Phys. IV France Volume 126, June 2005


Page(s)		139 - 142
DOI		https://doi.org/10.1051/jp4:2005126028

J. Phys. IV France 126 (2005) 139-142
DOI: 10.1051/jp4:2005126028

Piezoelectric and elastic properties of new layered ferroelectric-semiconductor materials of Sn $_{\bf 2}$ P $_{\bf 2}$ S $_{\bf 6}$ family

V. Samulionis¹, J. Banys¹ and Yu. Vysochanskii²

¹ Physics Department of Vilnius University, Sauletekio 9/3, 10222 Vilnius, Lithuania
² Institute of Solid State Physics and Chemistry of Uzhgorod University, Ukraine

Abstract
In this contribution, we present review of elastic and piezoelectric properties of new polar layered materials of Sn₂P₂S₆ family such as: CuInP₂S₆, CuInP₂Se₆, CuCrP₂S₆ and SnP₂S₆. These, recently obtained compounds, exhibit rich variety of piezoelectric properties, photosensitivity and ionic conductivity. Two investigation methods: resonance-antiresonance and ultrasonic pulse echo were used in order to measure the elastic and piezoelectric constants. The temperature dependences of longitudinal ultrasonic velocity and attenuation revealed clear anomalies near phase transitions in these layered materials. We observed large elastic nonlinearity in CuInP₂S₆ samples across layers in c-direction. The elastic nonlinnearity along layerss was much smaller. By direct pulse-echo experiments in low temperature phases, it was shown that the thin plates of CuInP₂S₆, CuCrP₂S₆, CuInP₂Se₆ and SnP₂S₆ layered compounds could effectively excite and detect ultrasonic waves.

Piezoelectric and elastic properties of new layered ferroelectric-semiconductor materials of SnPS family

Piezoelectric and elastic properties of new layered ferroelectric-semiconductor materials of Sn $_{\bf 2}$ P $_{\bf 2}$ S $_{\bf 6}$ family