| Issue |
J. Phys. IV France
Volume 125, June 2005
|
|
|---|---|---|
| Page(s) | 455 - 457 | |
| DOI | https://doi.org/10.1051/jp4:2005125107 | |
J. Phys. IV France 125 (2005) 455-457
DOI: 10.1051/jp4:2005125107
Investigation of the interface states in the SiO2 - Si system by photoacoustic method
D.M. Todorovic1, V. Jovic2 and M. Smiljanic21 Center for Multidisciplinary Studies, University of Belgrade, Serbia & Montenegro
2 Institute for chemistry, technology and metallurgy, Belgrade, Serbia & Montenegro
Abstract
The interface states in SiO2 - Si system was investigated by photoacoustic (PA) spectroscopy. The amplitude and phase spectra were measured and analyzed in dependence on the wavelength of excitation optical beam. In the energy range above the 1.11 eV, the spectral characteristic has a typical form for optical interference. The phase PA spectra of Si wafer and SiO2/Si structure are the same in the energy range above the energy gap of Si. In the energy range below the energy gap of Si, the PA spectra is the consequence of the carrier trapping states formed on dielectric-semiconductor interface.
© EDP Sciences 2005