| Issue |
J. Phys. IV France
Volume 119, November 2004
|
|
|---|---|---|
| Page(s) | 125 - 127 | |
| DOI | https://doi.org/10.1051/jp4:2004119021 | |
J. Phys. IV France 119 (2004) 125-127
DOI: 10.1051/jp4:2004119021
Spectroscopic characterization of Yb 3+- doped YLiF 4 laser single crystals grown by the Czochralski method
A. Bensalah1, Y. Guyot1, A. Brenier1, H. Sato2, T. Fukuda2 and G. Boulon11 Laboratoire de Physico Chimie des Matériaux Luminescents, UMR 5620 CNRS, Université Claude Bernard Lyon1, 69622 Villeurbanne, France
2 Institute for Multidisciplinary Research of Advanced Materials, Tohoku University, Sendai 980-8577, Japan
Abstract
Spectroscopic properties of Yb
3+ ion in the YLiF
4 host with different concentrations are investigated at room and low temperature. Assignment of Yb
3+ energy levels is proposed. A first estimation of this host as laser material is done and a comparison with other oxides is
presented.
© EDP Sciences 2004