| Issue |
J. Phys. IV France
Volume 110, September 2003
|
|
|---|---|---|
| Page(s) | 735 - 740 | |
| DOI | https://doi.org/10.1051/jp4:20020781 | |
J. Phys. IV France 110 (2003) 735
DOI: 10.1051/jp4:20020781
Determination of dynamic stress intensity factor of C/C-SiC composites
U. Mayer1, K. Srivastava2 and K. Maile11 Staatliche Materialprüfungsanstalt (MPA), University of Stuttgart, Pfaffenwaldring 32, 70569 Stuttgart, Germany
2 Department of Mechanical Engineering, Institute of Technology, B.H.U., Varanasi 005, India
Abstract
This paper presents a split Hopkinson pressure bar (SHPB) technique to determine the stress intensity factor of unoxidised
and oxidised (1600 °C for 15 min) carbon-carbon silicon carbide (C/C-SiC) composites with the chevron notched pre-crack length.
Only the Split Hopkinson input bar was used. The pressure pulse was used to load a pre-cracked specimen with the reflected
tensile pulse from the end of the specimen. The length ofthe specimen was chosen in such a way that the pressure and tension
pulse were separated. After the interprétation of the experimental data's, the dynamic stress intensity factor of each samples
were measured. The results show that the dynamic stress intensity factor was affected by the conditioning of C/C-SiC composite
specimens. The SEM micrographs were verified the effect of load and conditioning on morphology of C/C-SiC composite materials.
© EDP Sciences 2003