Polarons at the field-effect junctions

Abstract
We consider the interface of a molecular crystal with a polar dielectrics. Coulomb interaction of free electrons in the crystal with surface polar phonons of the dielectrics can lead to self-trapping of carriers. For typical parameters of field effect transistors the binding energy is found to be high enough t o allow for formation of a strongly coupled polaron. The effect is further enhanced at presence of the bias electric filed.