Epitaxial YBa2Cu3O7-8/SrTiO3 heterostructures grown by pulsed laser deposition for voltage agile microwave filter applications

K. Bouzehouane; P. Woodall; B. Marcilhac; A.N. Khodan; D. Crété; E. Jacquet; J.C. Mage; J.P. Contour

doi:doi:10.1051/jp4:20011106

Issue		J. Phys. IV France Volume 11, Number PR11, Décembre 2001 International Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures


Page(s)		Pr11-41 - Pr11-45
DOI		https://doi.org/10.1051/jp4:20011106

International Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures

J. Phys. IV France 11 (2001) Pr11-41-Pr11-45
DOI: 10.1051/jp4:20011106

Epitaxial YBa₂Cu₃O_7-8/SrTiO₃ heterostructures grown by pulsed laser deposition for voltage agile microwave filter applications

K. Bouzehouane, P. Woodall, B. Marcilhac, A.N. Khodan, D. Crété, E. Jacquet, J.C. Mage and J.P. Contour

Unité Mixte de Physique, CNRS/Thales, 91404 Orsay, France

Abstract
The performance of tunable microwave devices based on heteroepitaxial YBa₂Cu₃O_x/SrTiO₃ films on (001) LaAlO₃ substrate has been evaluated. It has been ascertained that 'out-of-plane' SrTiO₃ lattice parameter is the relevant factor in determining both the agility and dielectric loss of the SrTiO₃ layers. After high temperature annealing (1100 °C, 1 atm O₂), only SrTiO₃ layers deposited under low oxygen pressure (˜ 10^-5 Torr) show an appreciable reduction of the dielectric losses whilst maintaining high agility. Annealed samples exhibit voltage independent losses of ˜ 5.10^-3 simultaneously with 55% dielectric agility at 6 GHz and 77K.