Free Access
| Issue |
J. Phys. IV France
Volume 11, Number PR10, Décembre 2001
Journées d'Étude des Équilibres entre Phases
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| Page(s) | Pr10-133 - Pr10-136 | |
| DOI | https://doi.org/10.1051/jp4:20011019 | |
Journées d'Étude des Équilibres entre Phases
J. Phys. IV France 11 (2001) Pr10-133-Pr10-136
DOI: 10.1051/jp4:20011019
Laboratoire des Multimatériaux et Interfaces, UMR 5615, Université Lyon I, 43 boulevard du 11 novembre 1918, 69622 Villeurbanne, France
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr10-133-Pr10-136
DOI: 10.1051/jp4:20011019
Croissance de cristaux de SiC à partir d'un alliage liquide Al-Si saturé en carbone
G. Ferro, D. Chaussende, C. Jacquier, F. Cauwet, Y. Monteil, F. Bosselet and J.C. VialaLaboratoire des Multimatériaux et Interfaces, UMR 5615, Université Lyon I, 43 boulevard du 11 novembre 1918, 69622 Villeurbanne, France
Abstract
Growth of cubic β-SiC crystals from a C-saturated Al-Si melt under atmospheric pressure has been investigated at temperatures ranging from 700 to 1200°C and for silicon contents in the melt varying from 12.5 to 40 at%. Under favourable conditions (1100°C, 30 at%Si), crystals with (111) faces up to 100µm wide have been produced. Thermo-kinetic considerations based on an optimum deviation to the Al4C3-SiC-L monovariant equilibrium in the Al-C-Si ternary system are proposed for modelling the experimental results.
© EDP Sciences 2001