| Issue |
J. Phys. IV France
Volume 09, Number PR10, December 1999
International Workshop on Electronic CrystalsECRYS-99 |
|
|---|---|---|
| Page(s) | Pr10-129 - Pr10-132 | |
| DOI | https://doi.org/10.1051/jp4:19991033 | |
ECRYS-99
J. Phys. IV France 09 (1999) Pr10-129-Pr10-132
DOI: 10.1051/jp4:19991033
Phase slip scaling relationship for the 59 K and 143 K charge-density-waves in NbSe3
J.P. McCarten1, T.C. Jones1, X. Wu1, J.H. Miller Jr.2, I. Pirtle2, X. Xu2, J.R. Claycomb2, J.-R. Liu2 and W.-K. Chu21 Department of Physics and Astronomy, Clemson University, Clemson, SC 29634-1911, U.S.A.
2 Department of Physics and Texas Center for Superconductivity, University of Houston, 4800 Calhoun Rd., Houston, Texas 77204-5932, U.S.A.
Abstract
Selective area irradiation was used to create irradiated/unmodifïed/irradiated CDW heterostructures with
well-defined interfaces on a single NbSe3 crystal. The temperature dependence of the extra voltage required for
carrier conversion (phase slip voltage, Vps0) is extracted from length dependent studies. We find that the
temperature dependence of Vps0 for the 143 K and 59 K CDW transitions are identical if properly scaled by the
transition temperature. The Vps0 temperature dependence is not thermally activated, but contains an upper and
lower temperature branch. The crossover temperature for the two branches is 0.75TP. For the 59 K CDW we
observe a zero-bias resistance anomaly near a single irradiated/unmodified interface. This anomaly abruptly
changes with temperature near 44 K suggesting a qualitative change in the phase slip mechanism near 0.75TP.
© EDP Sciences 1999